28F640L18 datasheet(21/106 Pages) INTEL

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Intel StrataFlash® Wireless Memory (L18)

Datasheet

Intel StrataFlash® Wireless Memory (L18)

April 2005

Order Number: 251902, Revision: 009

4.2.2

128/0 and 256/0 SCSP Package Signal Descriptions

Table 2 describes the active signals used on the 128/0 and 256/0 SCSP.

Table 2.

Device Signal Descriptions for SCSP (Sheet 1 of 2)

Symbol

Type

Description

A[Max:0]

Input

ADDRESS INPUTS: Inputs for all die addresses during read and write operations.

•

128-Mbit Die: A[Max] = A22

•

256-Mbit Die: A[Max] = A23

DQ[15:0]

Input/

Output

DATA INPUTS/OUTPUTS: Inputs data and commands during write cycles, outputs data during read

cycles. Data signals float when the device or its outputs are deselected. Data is internally latched

during writes.

F1-CE#

F2-CE#

F3-CE#

Input

FLASH CHIP ENABLE: Low-true: selects the associated flash memory die. When asserted, flash

internal control logic, input buffers, decoders, and sense amplifiers are active. When deasserted, the

associated flash die is deselected, power is reduced to standby levels, data and WAIT outputs are

placed in high-Z state.

F1-CE# selects the flash die.

F2-CE# and F3-CE# are available on stacked combinations with two or three flash dies else they are

RFU. They each can be tied high to VCCQ through a 10K-ohm resistor for future design flexibility.

S-CS1#

S-CS2

Input

SRAM CHIP SELECTS: When both SRAM chip selects are asserted, SRAM internal control logic,

input buffers, decoders, and sense amplifiers are active. When either/both SRAM chip selects are

deasserted (S-CS1# = VIH or S-CS2 = VIL), the SRAM is deselected and its power is reduced to

standby levels.

Treat this signal as NC (No Connect) for this device.

P-CS#

Input

PSRAM CHIP SELECT: Low-true; when asserted, PSRAM internal control logic, input buffers,

decoders, and sense amplifiers are active. When deasserted, the PSRAM is deselected and its power

is reduced to standby levels.

Treat this signal as NC (No Connect) for this device.

F1-OE#

F2-OE#

Input

FLASH OUTPUT ENABLE: Low-true; enables the flash output buffers. OE#-high disables the flash

output buffers, and places the flash outputs in High-Z.

F1-OE# controls the outputs of the flash die.

F2-OE# is available on stacked combinations with two or three flash dies else it is RFU. It can be

pulled high to VCCQ through a 10K-ohm resistor for future design flexibility.

R-OE#

Input

RAM OUTPUT ENABLE: Low-true; R-OE#-low enables the selected RAM output buffers. R-OE#-high

disables the RAM output buffers, and places the selected RAM outputs in High-Z.

Treat this signal as NC (No Connect) for this device.

WE#

Input

FLASH WRITE ENABLE: Low-true; WE# controls writes to the selected flash die. Address and data

are latched on the rising edge of WE#.

R-WE#

Input

RAM WRITE ENABLE: Low-true; R-WE# controls writes to the selected RAM die.

Treat this signal as NC (No Connect) for this device.

CLK

Input

FLASH CLOCK: Synchronizes the device with the system’s bus frequency in synchronous-read mode

and increments the internal address generator. During synchronous read operations, addresses are

latched on the rising edge of ADV#, or on the next valid CLK edge with ADV# low, whichever occurs

first.

WAIT

Output

FLASH WAIT: Indicates data valid in synchronous array or non-array burst reads. Configuration

WAIT’s active output is VOL or VOH when CE# and OE# are asserted. WAIT is high-Z if CE# or OE# is

VIH.

•

In synchronous array or non-array read modes, WAIT indicates invalid data when asserted and

valid data when deasserted.

•

In asynchronous page mode, and all write modes, WAIT is deasserted.

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