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TS5A3166DBVR bảng dữ liệu(PDF) 13 Page - National Semiconductor (TI) |
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TS5A3166DBVR bảng dữ liệu(HTML) 13 Page - National Semiconductor (TI) |
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13 / 21 page ![]() TS5A3166 0.9 W SPST ANALOG SWITCH SCDS186 − FEBRUARY 2005 www.ti.com 13 PIN DESCRIPTION PIN NUMBER NAME DESCRIPTION 1 NO Normally open 2 COM Common 3 GND Digital ground 4 IN Digital control pin to connect COM to NO 5 V+ Power supply PARAMETER DESCRIPTION SYMBOL DESCRIPTION VCOM Voltage at COM VNO Voltage at NO ron Resistance between COM and NO ports when the channel is ON rpeak Peak on-state resistance over a specified voltage range ron(flat) Difference between the maximum and minimum value of ron in a channel over the specified range of conditions INO(OFF) Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state under worst-case input and output conditions INO(PWROFF) Leakage current measured at the NO port during the power-down condition, V+ = 0 ICOM(OFF) Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the OFF state under worst-case input and output conditions ICOM(PWROFF) Leakage current measured at the COM port during the power-down condition, V+ = 0 INO(ON) Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output (COM) open ICOM(ON) Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the ON state and the output (NO) open VIH Minimum input voltage for logic high for the control input (IN) VIL Maximum input voltage for logic low for the control input (IN) VI Voltage at the control input (IN) IIH, IIL Leakage current measured at the control input (IN) tON Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning ON. tOFF Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning OFF. QC Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NO or COM) output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input. Charge injection, QC = CL × ∆VCOM, CL is the load capacitance, and ∆VCOM is the change in analog output voltage. CNO(OFF) Capacitance at the NO port when the corresponding channel (NO to COM) is OFF CCOM(OFF) Capacitance at the COM port when the corresponding channel (COM to NO) is OFF CNO(ON) Capacitance at the NO port when the corresponding channel (NO to COM) is ON CCOM(ON) Capacitance at the COM port when the corresponding channel (COM to NO) is ON CI Capacitance of control input (IN) OISO OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific frequency, with the corresponding channel (NO to COM) in the OFF state. BW Bandwidth of the switch. This is the frequency at which the gain of an ON channel is −3 dB below the DC gain. THD Total harmonic distortion describes the signal distortion caused by the analog switch. This is defined as the ratio of root mean square (RMS) value of the second, third, and higher harmonic to the absolute magnitude of the fundamental harmonic. I+ Static power-supply current with the control (IN) pin at V+ or GND |
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