1999 Apr 12

2

Philips Semiconductors

Product specification

NPN power transistors

BD135; BD137; BD139

FEATURES

• High current (max. 1.5 A)

• Low voltage (max. 80 V).

APPLICATIONS

• Driver stages in hi-fi amplifiers and television circuits.

DESCRIPTION

NPN power transistor in a TO-126; SOT32 plastic

package. PNP complements: BD136, BD138 and BD140.

PINNING

PIN

DESCRIPTION

1

emitter

2

collector, connected to metal part of

mounting surface

3

base

Fig.1

Simplified outline (TO-126; SOT32) and

symbol.

handbook, halfpage

MAM254

12

3

Top view

1

2

3

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BD135

−

45

V

BD137

−

60

V

BD139

−

100

V

collector-emitter voltage

open base

BD135

−

45

V

BD137

−

60

V

BD139

−

80

V

emitter-base voltage

open collector

−

5V

collector current (DC)

−

1.5

A

peak collector current

−

2A

peak base current

−

1A

total power dissipation

−

8W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C