BCX71 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 20

Philips Semiconductors

Product speciﬁcation

PNP general purpose transistors

BCX71 series

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −45 V

−−−20

IE = 0; VCB = −45 V; Tamb = 150 °C

−−−20

µA

IEBO

emitter cut-off current

IC = 0; VEB = −4V

−−−20

hFE

DC current gain

IC = −10 µA; VCE = −5V

BCX71G

−−−

BCX71H

−−

BCX71J

−−

BCX71K

100

−−

DC current gain

IC = −2 mA; VCE = −5V

BCX71G

120

−

220

BCX71H

180

−

310

BCX71J

250

−

460

BCX71K

380

−

630

DC current gain

IC = −50 mA; VCE = −1 V; note 1

BCX71G

−−

BCX71H

−−

BCX71J

100

−−

BCX71K

110

−−

VCEsat

collector-emitter saturation

voltage

IC = −10 mA; IB = −0.25 mA

−60

−−250

IC = −50 mA; IB = −1.25 mA; note 1

−120

−−550

VBEsat

base-emitter saturation

voltage

IC = −10 mA; IB = −0.25 mA

−600

−−850

IC = −50 mA; IB = −1.25 mA; note 1

−680

−−1050 mV

VBE

base-emitter voltage

IC = −2 mA; VCE = −5V

−600

−650

−750

IC = −10 µA; VCE = −5V

−−550

−

IC = −50 mA; VCE = −1 V; note 1

−−720

−

collector capacitance

IE =Ie = 0; VCB = −10 V; f = 1 MHz

−

4.5

−

emitter capacitance

IC =Ic = 0; VEB = −0.5 V; f = 1 MHz

−

transition frequency

IC = −10 mA; VCE = −5 V; f = 100 MHz 100

−−

MHz

noise ﬁgure

IC = −200 µA; VCE = −5 V; RS =2kΩ;

f = 1 kHz; B = 200 Hz

−

26dB

BCX71 bảng dữ liệu(PDF) 3 Page - NXP Semiconductors

BCX71 bảng dữ liệu(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8

bảng dữ liệu tải về

Link URL