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BAT32LS bảng dữ liệu(PDF) 2 Page - Nexperia B.V. All rights reserved |
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BAT32LS bảng dữ liệu(HTML) 2 Page - Nexperia B.V. All rights reserved |
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2 / 8 page ![]() Nexperia BAT32LS General-purpose Schottky diode 6. Ordering information Table 3. Ordering information Package Type number Name Description Version BAT32LS DFN1006BD-2 Leadless ultra small plastic package with side-wettable flanks (SWF); 2 terminals; 0.65 mm pitch; 1 mm x 0.6 mm x 0.47 mm body SOD882BD 7. Marking Table 4. Marking codes Type number Marking code BAT32LS 8X 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage - 30 V IF forward current - 200 mA IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25 - 1 A IFSM non-repetitive peak forward current tp = 8 ms; square wave; Tj(init) = 25 °C - 3 A [1] - 335 mW Ptot total power dissipation Tamb ≤ 25 °C [2] - 610 mW Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), 70 μm single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, 70 μm single-sided copper, tin-plated mounting pad for cathode 1 cm2. 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit [1] [2] - - 375 K/W Rth(j-a) thermal resistance from junction to ambient in free air [3] - - 205 K/W [1] Device mounted on an FR4 PCB, 70 µm single-sided copper, tin-plated and standard footprint. [2] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. [3] Device mounted on an FR4 PCB, 70 μm single-sided copper, tin-plated mounting pad for cathode 1 cm2. BAT32LS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2022. All rights reserved Product data sheet 21 April 2022 2 / 8 |
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