Nexperia

BAT160A

Schottky barrier double diode

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

IF = 100 mA; Tamb = 25 °C

-

-

400

mV

IF = 1 A; Tamb = 25 °C

-

-

650

mV

VF

forward voltage

IF = 2 A; Tamb = 25 °C

-

-

850

mV

VR = 60 V; tp ≤ 300 µs; δ ≤ 0.02;

pulsed; Tamb = 25 °C

-

-

350

µA

IR

reverse current

VR = 60 V; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 100 °C

-

-

8

mA

Cd

diode capacitance

VR = 4 V; f = 1 MHz; Tamb = 25 °C

-

-

60

pF

mcd784

0.8

0.4

0.2

0

VF (V)

IF

(mA)

0.6

104

103

102

10

1

(1)

(3)

(2)

(4)

(1) Tamb = 125 °C

(2) Tamb = 100 °C

(3) Tamb = 75 °C

(4) Tamb = 25 °C

Fig. 1. Forward current as a function of forward

voltage; typical values

mcd768

60

40

20

0

(3)

VR (V)

104

105

103

102

10

IR

(µA)

1

10- 1

(1)

(2)

(4)

(1) Tamb = 125 °C

(2) Tamb = 100 °C

(3) Tamb = 75 °C

(4) Tamb = 25 °C

Fig. 2. Reverse current as a function of reverse

voltage; typical values

BAT160A

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Product data sheet

22 September 2022

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