VB2120 datasheet(4/9 Pages) VBSEMI

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TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

100

125

150

VGS =2.5 V

ID = -5 .6 A

VGS =4.5 V

TJ -Junction Temperature (°C)

0.00

0.01

0.02

0.03

0.04

0.05

0.06

1234

ID = -2.5 A; TJ = 125 °C

ID = -5.6 A; TJ = 25 °C

ID = -5 .6 A; T J = 125 °C

VGS - Gate-to-Source Voltage (V)

ID = -2.5 A; TJ = 25 °C

Time (s)

1000

0.1

0.01

0.001

100

Soure-Drain Diode Forward Voltage

Threshold Voltage

Safe Operating Area, Junction-to-Ambient

0.1

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

TJ = 25 °C

TJ = 150 °C

VSD -Source-to-Drain Voltage (V)

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

- 50

- 25

100

125

150

ID = 250 µA

TJ - Temperature (°C)

100

0.1

100

0.01

0.1

TA = 25 °C

Single Pulse

100 ms

Limited byRDS(on)*

BVDSS Limited

1ms

100 µs

10 ms

1s,10s

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

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VB2120

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