VB1210 datasheet(4/9 Pages) VBSEMI

tên linh kiện	VB1210

Giải thích chi tiết về linh kiện	N-Channel 20V (D-S) MOSFET

PDF	9 Pages

Scroll/Zoom	100%

nhà sản xuất	VBSEMI [VBsemi Electronics Co.,Ltd]

Trang chủ	www.VBsemi.com

Logo

4 / 9 page

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.01

0.001

0.1

100

TJ = 25 °C

TJ = 150 °C

VSD -Source-to-Drain Voltage (V)

- 1.0

- 0.7

- 0.4

- 0.1

0.2

0.5

- 50

- 25

100

125

150

ID = 250 µA

ID =5mA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power (Junction-to-Ambient)

0.00

0.01

0.02

0.03

0.04

0.05

012

345

910

TJ =25 °C

TJ = 125 °C

VGS - Gate-to-Source Voltage (V)

120

00.01

Time (s)

0.1

Safe Operating Area, Junction-to-Ambient

0.01

100

0.01

0.1

1ms

10 ms

0.1

TA = 25 °C

Single Pulse

Limited byRDS(on)*

10 s

BVDSS Limited

100 ms

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

VB1210

www.VBsemi.com

服务热线：400-655-8788

VB1210 bảng dữ liệu(PDF) 4 Page - VBsemi Electronics Co.,Ltd

VB1210 bảng dữ liệu(HTML) 4 Page - VBsemi Electronics Co.,Ltd

Html Pages

1 2 3 4 5 6 7 8 9

bảng dữ liệu tải về

Link URL