BCV65 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 22

Philips Semiconductors

Product speciﬁcation

NPN/PNP general purpose transistor

BCV65

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Notes

1. VBEsat decreases by approximately 1.7 mV/K with increasing temperature.

2. VBE decreases by approximately 2 mV/K with increasing temperature.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor

ICBO

collector cut-off current

IE = 0; VCB =30V

−−

IE = 0; VCB =30V; Tj = 150 °C

−−

µA

hFE

DC current gain

IC = 2 mA; VCE =5V

−

800

VCEsat

collector-emitter saturation voltage

IC = 10 mA; IB = 0.5 mA

−

300

IC = 100 mA; IB =5mA

−

250

650

VBEsat

base-emitter saturation voltage

IC = 10 mA; IB = 0.5 mA; note 1

−

700

−

IC = 100 mA; IB = 5 mA; note 1

−

900

−

VBE

base-emitter voltage

IC = 2 mA; VCE = 5 V; note 2

580

650

750

IC = 10 mA; VCE = 5 V; note 2

−−

820

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