D24V0LA1B2LPQ

Document number: DS43351 Rev. 1 - 2

2 of 5

www.diodes.com

December 2021

© Diodes Incorporated

D24V0LA1B2LPQ

S

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Conditions

Peak Pulse Power Dissipation

PPP

230

W

8/20µs, Per Figure 3

Peak Pulse Current

IPP

5

A

8/20µs, Per Figure 3

ESD Protection

– Contact Discharge

VESD_Contact

±30

kV

IEC 61000-4-2 Standard

ESD Protection

– Air Discharge

VESD_Air

±30

kV

IEC 61000-4-2 Standard

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Package Power Dissipation (Note 5)

PD

250

mW

Thermal Resistance, Junction to Ambient (Note 5)

RJA

500

C/W

Operating and Storage Temperature Range

TJ, TSTG

-65 to +150

C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Reverse Standoff Voltage

VRWM

—

—

24

V

—

Channel Leakage Current (Note 6)

IRM

—

—

100

nA

VR = 24V

Clamping Voltage, Positive Transients

VCL

—



—

42

V

IPP = 1A, tP = 8/20μs

—

—

46

IPP = 5A, tP = 8/20μs

—

31.4

—

ITLP = 16A, tP = 100ns, Pin1 to

Pin2

—

33.1

—

ITLP = 30A, tP = 100ns, Pin1 to

Pin2

—

32.3

—

ITLP = 16A, tP = 100ns, Pin2 to

Pin1

—

34.2

—

ITLP = 30A, tP = 100ns, Pin2 to

Pin1

Breakdown Voltage

VBR

25

—

33

V

IR = 1mA

Channel Input Capacitance

CT

—

15.6

20

pF

VR = 0V, f = 1MHz

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on

Diodes Incorporated’s suggested pad layout, which can be found on our website at

http://www.diodes.com/package-outlines.html.

6. Short duration pulse test used to minimize self-heating effect.