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BAS116H

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Product data sheet

Rev. 3 — 31 May 2011

2 of 10

Nexperia

BAS116H

Low leakage switching diode

3.

Ordering information

4.

Marking

5.

Limiting values

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Pulse test: tp  300 s;  0.02.

[3]

Tj =25 C prior to surge.

[4]

Reflow soldering is the only recommended soldering method.

[5]

Soldering point of cathode tab.

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BAS116H

-

plastic surface-mounted package; 2 leads

SOD123F

Table 4.

Marking codes

Type number

Marking code

BAS116H

B1

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VRRM

repetitive peak reverse

voltage

-85

V

VR

reverse voltage

-

75

V

IF

forward current

[1][2] -215

mA

IFRM

repetitive peak forward

current

-500

mA

IFSM

non-repetitive peak forward

current

square wave

[3]

tp =1 s-

4

A

tp =1ms

-

1

A

tp =1s

-

0.5

A

Ptot

total power dissipation

Tamb  25 C

[1][4]

[5]

-375

mW

Tj

junction temperature

-

150

C

Tamb

ambient temperature

65

+150

C

Tstg

storage temperature

65

+150

C