IXYS reserves the right to change limits, test conditions, and dimensions.

IXTP 10N60PM

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

6

11

S

C

iss

1610

pF

C

oss

V

165

pF

C

rss

14

pF

t

d(on)

20

ns

t

r

V

24

ns

t

d(off)

R

55

ns

t

f

18

ns

Q

g(on)

32

nC

Q

gs

V

11

nC

Q

gd

10

nC

R

thJS

2.5

°C/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

Typ.

Max.

I

S

V

10

A

I

SM

Repetitive

30

A

V

SD

I

1.5

V

Pulse test, t

≤ 300 μs, duty cycle d ≤ 2 %

t

rr

I

500

ns

V

Terminals:

1 - Gate

2 - Drain (Collector)

3 - Source (Emitter)

12

3

ISOLATED TO-220 (IXTP...M)

IXYS MOSFETs and IGBTs are covered by 4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from data gathered during objective characterizations of preliminary engineering lots; but

also may yet contain some information supplied during a pre-production design evaluation. IXYS

reserves the right to change limits, test conditions, and dimensions without notice.