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BC856S bảng dữ liệu(PDF) 2 Page - NXP Semiconductors

tên linh kiện BC856S
Giải thích chi tiết về linh kiện  PNP general purpose double transistor
PDF  8 Pages
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nhà sản xuất  PHILIPS [NXP Semiconductors]
Trang chủ  http://www.nxp.com
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BC856S bảng dữ liệu(HTML) 2 Page - NXP Semiconductors

  BC856S Datasheet HTML 1Page - NXP Semiconductors BC856S Datasheet HTML 2Page - NXP Semiconductors BC856S Datasheet HTML 3Page - NXP Semiconductors BC856S Datasheet HTML 4Page - NXP Semiconductors BC856S Datasheet HTML 5Page - NXP Semiconductors BC856S Datasheet HTML 6Page - NXP Semiconductors BC856S Datasheet HTML 7Page - NXP Semiconductors BC856S Datasheet HTML 8Page - NXP Semiconductors  
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1999 Aug 24
2
Philips Semiconductors
Product specification
PNP general purpose double transistor
BC856S
FEATURES
• Two transistors in one package
• Reduces number of components and board space
• No mutual interference between the transistors.
APPLICATIONS
• General purpose switching and small signal
amplification.
DESCRIPTION
PNP double transistor in an SC-88 (SOT363) plastic six
lead package.
PINNING
MARKING
PIN
DESCRIPTION
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
6, 3
collector
TR1; TR2
TYPE NUMBER
MARKING CODE
BC856S
5Ft
handbook, halfpage
13
2
4
5
6
Top view
MAM339
13
2
TR1
TR2
6
4
5
Fig.1 Simplified outline (SC-88) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Refer to SC-88 (SOT363) standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
VCBO
collector-base voltage
open emitter
−−80
V
VCEO
collector-emitter voltage
open base
−−65
V
VEBO
emitter-base voltage
open collector
−−5V
IC
collector current (DC)
−−100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
−
300
mW



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