Nexperia

BAS16VV

High-speed switching diode

6. Ordering information

Table 3. Ordering information

Package

Type number

Name

Description

Version

BAS16VV

SOT666

plastic, surface-mounted package; 6 leads; 0.5 mm pitch;

1.6 mm x 1.2 mm x 0.55 mm body

SOT666

7. Marking

Table 4. Marking codes

Type number

Marking code

BAS16VV

53

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

VRRM

repetitive peak reverse

voltage

-

100

V

VR

reverse voltage

-

100

V

IF

forward current

[1] [2]

-

200

mA

tp = 1 µs; square wave; Tj(init) = 25 °C

-

4

A

tp = 1 ms; square wave; Tj(init) = 25 °C

-

1

A

IFSM

non-repetitive peak

forward current

tp = 1 s; square wave; Tj(init) = 25 °C

-

0.5

A

IFRM

repetitive peak forward

current

tp ≤ 0.5 ms; δ ≤ 0.25

-

500

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1] [2]

-

180

mW

Per device

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-65

150

°C

Tstg

storage temperature

-65

150

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

[2] Single diode loaded.

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

[1] [2] -

-

700

K/W

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[3] [2] -

-

410

K/W

[1] Device mounted on an FR4 PCB with 60 µm copper strip line.

[2] Single diode loaded.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm2.

BAS16VV

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© Nexperia B.V. 2022. All rights reserved

Product data sheet

27 December 2022

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