Nexperia

PMN40XPEA

20 V, P-channel Trench MOSFET

aaa-031622

VDS (V)

-10-1

-102

-10

-1

-10-1

-10-3

-10-2

-10

-1

-102

ID

(A)

-10-4

DC; Tsp = 25 °C

DC; Tamb = 25 °C;

drain mounting pad 6 cm2

tp = 10 µs

tp = 10 µs

tp = 10 µs

100 µs

1 ms

10 ms

100 ms

Limit RDSon = VDS/ID

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

PMN40XPEA

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Product data sheet

7 July 2020

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