Nexperia

PMEG2005EB

Low VF MEGA Schottky barrier diode

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IF = 0.1 mA; tp ≤ 300 µs; δ ≤ 0.02;

Tamb = 25 °C

-

120

180

mV

IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02;

Tamb = 25 °C

-

180

240

mV

IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02;

Tamb = 25 °C

-

245

290

mV

IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02;

Tamb = 25 °C

-

320

380

mV

VF

forward voltage

IF = 500 mA; tp ≤ 300 µs; δ ≤ 0.02;

Tamb = 25 °C

-

430

480

mV

IR

reverse current

VR = 10 V; tp ≤ 300 µs; δ ≤ 0.02;

Tamb = 25 °C

-

7

30

µA

Cd

diode capacitance

VR = 1 V; f = 1 MHz; Tamb = 25 °C

-

24

30

pF

0.5

0

VF (V)

IF

(mA)

0.1

0.2

0.3

0.4

103

102

10- 1

10- 2

10

1

mhc456

(1)

(3)

(2)

(1) Tamb = 125 °C

(2) Tamb = 85 °C

(3) Tamb = 25 °C

Fig. 1. Forward current as a function of forward

voltage; typical values

30

20

10

0

VR (V)

IR

(µA)

104

103

102

10

1

mhc457

(1)

(2)

(3)

(1) Tamb = 125 °C

(2) Tamb = 85 °C

(3) Tamb = 25 °C

Fig. 2. Reverse current as a function of reverse

voltage; typical values

PMEG2005EB

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Product data sheet

27 September 2019

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