NXH300B100H4Q2F2, NXH300B100H4Q2F2SG−R

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2

ABSOLUTE MAXIMUM RATINGS (Note 1) (TJ = 25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

IGBT (T11, T21, T12, T22, T13, T23)

VCES

Collector−Emitter voltage

1000

V

VGE

Gate−Emitter Voltage

Positive transient gate−emitter voltage (Tpulse = 5 ms, D < 0.10)

±20

30

V

IC

Continuous Collector Current (@ VGE = 20 V, TC = 80°C)

73

A

IC(Pulse)

Pulsed Peak Collector Current @ TC = 80°C (TJ = 150°C)

219

A

Ptot

Power Dissipation (TJ = 150°C, TC = 80°C)

194

W

TJMIN

Minimum Operating Junction Temperature

−40

°C

TJMAX

Maximum Operating Junction Temperature

175

°C

IGBT INVERSE DIODE (D11, D21, D12, D22, D13, D23) AND BYPASS DIODE (D51, D61, D52, D62, D53, D63)

VRRM

Peak Repetitive Reverse Voltage

1600

V

IF

Continuous Forward Current @ TC = 80°C

36

A

IFRM

Repetitive Peak Forward Current (TJ = 150°C, TJ limited by TJmax)

108

A

Ptot

Maximum Power Dissipation @ TC = 80°C (TJ = 150°C)

79

W

TJMIN

Minimum Operating Junction Temperature

−40

°C

TJMAX

Maximum Operating Junction Temperature

150

°C

BOOST SILICON CARBIDE SCHOTTKY DIODE (D31, D41, D32, D42, D33, D43)

VRRM

Peak Repetitive Reverse Voltage

1200

V

IF

Continuous Forward Current @ TC = 80°C

36

A

IFRM

Repetitive Peak Forward Current (TJ = 150°C, TJ limited by TJmax)

108

A

Ptot

Maximum Power Dissipation @ TC = 80°C (TJ = 150°C)

104

W

TJMIN

Minimum Operating Junction Temperature

−40

°C

TJMAX

Maximum Operating Junction Temperature

175

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe

Operating parameters.

THERMAL AND INSULATION PROPERTIES (Note 1) (TJ = 25°C unless otherwise noted)

Symbol

Rating

Value

Unit

THERMAL PROPERTIES

TVJOP

Operating Temperature under Switching Condition

−40 to 150

°C

Tstg

Storage Temperature Range

−40 to 125

°C

INSULATION PROPERTIES

Vis

Isolation Test Voltage, t = 2 sec, 50 Hz (Note 3)

4000

VRMS

Creepage Distance

12.7

mm

CTI

Comparative Tracking Index

>600

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

2. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe

Operating parameters.

3. 4000 VACRMS for 1 second duration is equivalent to 3333 VACRMS for 1 minute duration.