1999 Apr 23

2

Philips Semiconductors

Product specification

PNP Darlington transistor

BC516

FEATURES

• High current (max. 500 mA)

• Low voltage (max. 30 V)

• Very high DC current gain (min. 30000).

APPLICATIONS

• Where very high amplification is required.

DESCRIPTION

PNP Darlington transistor in a TO-92; SOT54 plastic

package. NPN complement: BC517.

PINNING

PIN

DESCRIPTION

1

emitter

2

base

3

collector

Fig.1

Simplified outline (TO-92; SOT54)

and symbol.

handbook, halfpage

MAM303

23

1

TR2

TR1

1

2

3

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage (open emitter)

open emitter

−−40

V

collector-emitter voltage

−−30

V

emitter-base voltage

open collector

−−10

V

collector current (DC)

−−500

mA

peak collector current

−−800

mA

base current (DC)

−−100

mA

total power dissipation

−

500

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C