PDTC114TU datasheet(6/12 Pages) NEXPERIA

tên linh kiện	PDTC114TU

Giải thích chi tiết về linh kiện	PNP resistor-equipped transistors; R1 = 10 kW, R2 = open

PDF	12 Pages

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nhà sản xuất	NEXPERIA [Nexperia B.V. All rights reserved]

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PDTA114T_SER_7

Product data sheet

Rev. 07 — 20 April 2007

5 of 11

NXP Semiconductors

PDTA114T series

PNP resistor-equipped transistors; R1 = 10 k

Ω, R2 = open

Characteristics

Table 8.

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB = −50 V; IE =0A

−100

ICEO

collector-emitter

cut-off current

VCE = −30 V; IB =0A

−1

µA

VCE = −30 V; IB =0A;

Tj = 150 °C

−50

µA

IEBO

emitter-base cut-off

current

VEB = −5 V; IC =0A

−100

hFE

DC current gain

VCE = −5 V; IC = −1 mA

200

VCEsat

collector-emitter

saturation voltage

IC = −10 mA;

IB = −0.5 mA

−150

bias resistor 1 (input)

Ω

collector capacitance

VCB = −10 V; IE =ie =0A;

f = 1 MHz

VCE = −5V

(1) Tamb = 150 °C

(2) Tamb =25 °C

(3) Tamb = −40 °C

IC/IB =20

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −40 °C

Fig 1.

DC current gain as a function of collector

current; typical values

Fig 2.

Collector-emitter saturation voltage as a

function of collector current; typical values

006aaa554

200

400

600

hFE

IC (mA)

−10−1

−102

−10

−1

(1)

(2)

(3)

006aaa555

IC (mA)

−10−1

−102

−10

−1

−10−1

−1

VCEsat

(V)

−10−2

(1)

(2)

(3)

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