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Giải thích chi tiết về linh kiện  200V, 7.5A Enhancement Mode GaN Power Transistor
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FN8976 Rev.6.01
Page 4 of 12
May 5, 2022
ISL70024SEH, ISL73024SEH
2. Specifications
2.
Specifications
2.1
Absolute Maximum Ratings
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such
conditions can adversely impact product reliability and result in failures not covered by warranty.
2.2
ESD Ratings
2.3
Thermal Information
Parameter
Maximum
Unit
VDS
200
V
VDS (Note 6)
160
V
VGS
-4 to 6
V
Note:
6. Tested in a heavy ion environment at LET = 86.4MeV•cm2/mg at +125°C (TC).
ESD Model/Test
Rating
Unit
Drain-to-Source
Human Body Model (Tested per MIL-STD-883 TM3015)
2
kV
Machine Model (Tested per JESD22-A115C)
200
V
Charged Device Model (Tested per JS-002-2014)
750
V
Gate-to-Source
Human Body Model (Tested per MIL-STD-883 TM3015)
500
V
Machine Model (Tested per JESD22-A115C)
200
V
Charged Device Model (Tested per JS-002-2014)
750
V
ISL70024SEH, ISL73024SEH in SMD Package J4.A
Thermal Resistance
Typical
Maximum
Unit
JA (Note 7)
42.0
-
°C/W
JC (Note 8)
18.7
23.4
°C/W
Notes:
7.
JA is measured in free air with the component mounted on a high-effective thermal conductivity test board with “direct attach”
features. See TB379.
8. For
JC, the “case temp” location is on the solder terminations adjacent to the center of the package underside.
Parameter
Minimum
Maximum
Unit
Maximum Junction Temperature
-
+150
°C
Storage Temperature Range
-65
+150
°C



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