BCM857BV

Datasheet number: DS37433 Rev. 4 - 2

2 of 7

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June 2022

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BCM857BV

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

-50

V

Collector-Emitter Voltage

VCEO

-45

V

Emitter-Base Voltage

VEBO

-5.0

V

Collector Current

IC

-100

mA

Peak Collector Current

ICM

-200

mA

Peak Base Current

IBM

-200

mA

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation. Total Device (Note 6)

PD

500

mW

Power Dissipation. Single Transistor (Note 7)

PD

357

mW

Thermal Resistance, Junction to Ambient Air (Note 6)

RθJA

+250

°C/W

Thermal Resistance, Junction to Ambient Air (Note 7)

RθJA

+350

°C/W



Operating and Storage Temperature Range

TJ, TSTG

-65 to +150

°C

ESD Ratings (Note 8)

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge - Human Body Model

ESD HBM

4,000

V

3A

Electrostatic Discharge - Machine Model

ESD MM

400

V

C

Notes:

6. For a device with two active die running at equal power, mounted on minimum recommended pad layout with 1oz copper that is on a single-sided

1.6mm FR4 PCB; the device is measured under still air conditions whilst operating in a steady-state.

7. Same as Note 6 except for only one active die running.

8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.