7.6 Typical Characteristics (continued)

at TA = 25°C, VS = VSOUT = ±15 V, VICM = VOCM = 0 V, RL = 10 kΩ, and G = 1 V/V (unless otherwise noted)

Input Referred Offset Voltage (mV)

0

5

10

15

20

-4

-2

0

2

4

N = 2500

Mean = –36 µV

Std. dev. = 540 µV

G = 0.125 V/V

Figure 7-1. Distribution of Offset Voltage (RTI)

Input Referred Offset Voltage ( V)

0

5

10

15

20

-400

-300

-200

-100

0

100

200

300

400

N = 2500

Mean = 2.83 µV

Std. dev. = 71.58 µV

G = 1 V/V

Figure 7-2. Distribution of Offset Voltage (RTI)

Input Referred Offset Voltage ( V)

0

10

20

30

-400

-300

-200

-100

0

100

200

300

400

N = 2500

Mean = –21.25 µV

Std. dev. = 36.79 µV

G = 16 V/V

Figure 7-3. Distribution of Offset Voltage (RTI)

Offset Voltage Drift ( V/ C )

0

5

10

15

20

-8

-6

-4

-2

0

2

4

6

8

N = 53

Mean = –0.028 µV/°C

Std. dev. = 1.69 µV/°C

G = 0.125 V/V

Figure 7-4. Distribution of Offset Voltage Drift (RTI)

Offset Voltage Drift ( V/ C)

0

10

20

30

-1

-0.8

-0.6

-0.4

-0.2

0

0.2

0.4

0.6

0.8

1

N = 53

Mean = –0.024 µV/°C

Std. dev. = 0.22 µV/°C

G = 1 V/V

Figure 7-5. Distribution of Offset Voltage Drift (RTI)

Offset Voltage Drift ( V/ C)

0

10

20

30

-1

-0.8

-0.6

-0.4

-0.2

0

0.2

0.4

0.6

0.8

1

N = 53

Mean = –0.11 µV/°C

Std. dev. = 0.08 µV/°C

G = 16 V/V

Figure 7-6. Distribution of Offset Voltage Drift (RTI)

PGA855

SBOSAE0 – APRIL 2023

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