PBSS4032PD_1

© NXP B.V. 2010. All rights reserved.

Product data sheet

Rev. 01 — 27 January 2010

3 of 14

NXP Semiconductors

PBSS4032PD

30 V, 2.7 A PNP low VCEsat (BISS) transistor

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

[3]

Device mounted on a ceramic PCB, Al2O3, standard footprint.

Ptot

total power dissipation

Tamb ≤ 25 °C

[1] -

480

mW

[2] -

750

mW

[3] -1

W

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−55

+150

°C

Tstg

storage temperature

−65

+150

°C

(1) Ceramic PCB, Al2O3, standard footprint

(2) FR4 PCB, mounting pad for collector 6 cm2

(3) FR4 PCB, standard footprint

Fig 1.

Power derating curves

Table 5.

Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Tamb (°C)

−75

175

125

25

75

−25

006aab931

400

800

1200

Ptot

(mW)

0

(1)

(3)

(2)