Nexperia

BAW101S-Q

High voltage double diode

200

100

50

0

150

102

10

1

10- 1

10- 2

mle058

(1)

(2)

Tj (°C)

IR

(µA)

VR = VRmax

VR = VRmax

Fig. 4. Reverse current as a function of junction

temperature; typical values

0

2

10

0.6

0.5

0.3

0.2

0.4

4

VR (V)

Cd

(pF)

6

8

mle059

f = 1 MHz

Tj = 25 °C

Fig. 5. Diode capacitance as a function of reverse

voltage; typical values

0

50

Tamb (°C)

VR

(V)

100

200

400

300

100

0

200

150

mle060

VR = 300 V

Tamb = 150 °C

Fig. 6. Reverse voltage as a function of ambient temperature; typical values

11. Test information

Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC)

standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in

automotive applications.

BAW101S-Q

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2021. All rights reserved

Product data sheet

14 September 2021

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