1996 Oct 01

2

Philips Semiconductors

Product specification

Schottky barrier diode

BAS85

FEATURES

• Low forward voltage

• High breakdown voltage

• Guard ring protected

• Hermetically-sealed small SMD

package.

APPLICATIONS

• Ultra high-speed switching

• Voltage clamping

• Protection circuits

• Blocking diodes.

DESCRIPTION

Planar Schottky barrier diode with an

integrated protection ring against

static discharges.

This surface mounted diode is

encapsulated in a hermetically sealed

SOD80C glass SMD package with

tin-plated metal discs at each end. It

is suitable for “automatic placement”

and as such it can withstand

immersion soldering.

Fig.1 Simplified outline (SOD80C), pin configuration and symbol.

handbook, halfpage

MAM190

ka

Cathode indicated by a grey band.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Refer to SOD80 standard mounting conditions.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

continuous reverse voltage

−

30

V

continuous forward current

−

200

mA

average forward current

note 1; Fig.2

−

200

mA

repetitive peak forward current

−

300

mA

non-repetitive peak forward current

−

5A

storage temperature

−65

+150

°C

junction temperature

−

125

°C

operating ambient temperature

−65

+125

°C