PBSS302PZ_2

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 02 — 20 November 2009

4 of 14

NXP Semiconductors

PBSS302PZ

20 V, 5.5 A PNP low VCEsat (BISS) transistor

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

[3]

Device mounted on a ceramic PCB, Al2O3, standard footprint.

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1] --

179

K/W

[2] --

74

K/W

[3] --

63

K/W

Rth(j-sp)

thermal resistance from

junction to solder point

--

15

K/W

FR4 PCB, standard footprint

Fig 2.

Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

006aaa561

10

1

102

103

Zth(j-a)

(K/W)

10−1

10−5

10

10−2

10−4

102

10−1

tp (s)

10−3

103

1

0

0.10

0.01

δ = 1

0.75

0.50

0.33

0.20

0.05

0.02