BAS45A datasheet(2/6 Pages) PHILIPS

2 / 6 page

1996 Mar 13

Philips Semiconductors

Product speciﬁcation

Low-leakage diode

BAS45A

FEATURES

• Continuous reverse voltage:

max. 125 V

• Repetitive peak forward current:

max. 625 mA

• Low reverse current: max. 1 nA

• Switching time: typ. 1.5 µs.

APPLICATION

• Low leakage current applications.

DESCRIPTION

Epitaxial medium-speed switching diode with a low leakage current in a

hermetically-sealed glass SOD68 (DO-34) package.

Fig.1 Simplified outline (SOD68; DO-34) and symbol.

handbook, halfpage

MAM156

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Device mounted on a printed-circuit board without metallization pad.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VRRM

repetitive peak reverse voltage

−

125

continuous reverse voltage

−

125

continuous forward current

see Fig.2; note 1

−

250

IFRM

repetitive peak forward current

−

625

IFSM

non-repetitive peak forward current square wave; Tj =25 °C prior to

surge; see Fig.4

tp =1 µs

−

tp =1ms

−

tp =1s

−

0.5

Ptot

total power dissipation

Tamb =25 °C

−

300

Tstg

storage temperature

−65

+175

°C

junction temperature

−

175

°C

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