BAS221 datasheet(5/8 Pages) PHILIPS

tên linh kiện	BAS221

Giải thích chi tiết về linh kiện	General purpose diode

PDF	8 Pages

Scroll/Zoom	100%

nhà sản xuất	PHILIPS [NXP Semiconductors]

Trang chủ	http://www.nxp.com

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5 / 8 page

1999 May 07

Philips Semiconductors

Product speciﬁcation

General purpose diode

BAS221

Fig.5

Reverse current as a function of junction

temperature.

handbook, halfpage

102

200

MBG381

100

Tj (

oC)

(

µA)

10 2

(1)

(2)

(1) VR =VRmax; maximum values.

(2) VR =VRmax; typical values.

Fig.6

Diode capacitance as a function of reverse

voltage; typical values.

f = 1 MHz; Tj =25 °C.

handbook, halfpage

1.0

0.8

0.2

0.6

0.4

MBG447

VR (V)

(pF)

Fig.7 Reverse recovery time and waveforms.

(1) IR = 3 mA.

Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05.

Oscilloscope: rise time tr = 0.35 ns.

Circuit capacitance C

≤ 1 pF (oscilloscope input + parasitic capacitance).

handbook, full pagewidth

t rr

(1)

I F

output signal

t r

t p

10%

90%

input signal

V = V

I x R

R = 50

Ω

D.U.T.

R = 50

Ω

SAMPLING

OSCILLOSCOPE

MGA881

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