1998 Jan 20

2

Philips Semiconductors

Product specification

High-speed diode

BAS16T

FEATURES

• Very small plastic SMD package

• High switching speed: max. 4 ns

• Continuous reverse voltage:

max. 75 V

• Repetitive peak reverse voltage:

max. 85 V

• Repetitive peak forward current:

max. 500 mA.

APPLICATIONS

• High-speed switching in e.g.

surface mounted circuits.

DESCRIPTION

The BAS16T is a high-speed

switching diode fabricated in planar

technology, and encapsulated in the

very small plastic SMD SOT416

(SC-75) package.

PINNING

PIN

DESCRIPTION

1

anode

2

not connected

3

cathode

Fig.1 Simplified outline (SOT416; SC-75) and symbol.

Marking code: A6.

handbook, 4 columns

1

Top view

MAM393

2

3

2

n.c.

1

3

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

repetitive peak reverse voltage

−

85

V

continuous reverse voltage

−

75

V

continuous forward current

−

155

mA

repetitive peak forward current

−

500

mA

non-repetitive peak forward current

surge; see Fig.4

t=1

µs

−

4A

t=1ms

−

1A

t=1s

−

0.5

A

total power dissipation

−

170

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C