6.5 Electrical Characteristics

At TA=25

℃ (unless otherwise noted) (1)

PARAMETER

TEST CONDITION

MIN

TYP

MAX

UNIT

VRWM

Reverse stand-off

voltage

IIO <100 nA, across operating temperature range

-5.5

5.5

V

ILEAK

Reverse leakage

current

VIO = 5.5 V, IO to GND or GND to IO

5

50

nA

VBRR

Break-down

voltage

IIO = 1 mA, IO to GND

7

8

9

V

VBRF

Break-down

voltage

IIO = 1 mA, GND to IO

7

8

9

V

VHOLD

Holding voltage

(2)

TLP, IO to GND or GND to IO

7.2

V

VCLAMP

Clamping voltage

with TLP

IPP = 1 A, TLP, IO to GND

7.6

V

IPP = 5 A, TLP, IO to GND

8.2

V

IPP = 16 A, TLP, IO to GND

10.4

V

IPP =1 A, TLP, GND to IO

7.6

V

IPP =5 A, TLP, GND to IO

8.2

V

IPP =16 A, TLP, GND to IO

10.4

V

Clamping voltage

with surge strike

(4)

IPP = 4.4 A, tp = 8/20 µs , IO to GND

10.8

V

IPP = 4.4 A, tp = 8/20 µs , GND to IO

10.8

V

RDYN

Dynamic

resistance (3)

IO to GND

0.19

Ω

GND to IO

CL

Line capacitance VIO = 0 V; ƒ = 1 MHz, Vpp = 30 mV, IO to GND or IO to GND

0.5

pF

(1)

Typical parameters are measured at 25

℃

(2)

Transition line pulse with 100 ns width and 10 ns rise and fall time

(3)

Extraction of RDYN using least squares fit of TLP characteristics between I = 10 A and I = 20 A

(4)

Non-repetitive current pulse 8 to 20 µs exponentially decaying waveform according to IEC 61000-4-5

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SLVSH27 – APRIL 2023

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