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ICS841S012DI bảng dữ liệu(PDF) 6 Page - Renesas Technology Corp

tên linh kiện ICS841S012DI
Giải thích chi tiết về linh kiện  Crystal-to-0.7V Differential HCSL/ LVCMOS Frequency Synthesizer
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841S012DI Datasheet
©2016 Integrated Device Technology, Inc
January 4, 2016
6
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, V
DD
4.6V
Inputs, V
I
-0.5V to V
DD
+ 0.5 V
Outputs, V
O
-0.5V to V
DDO
+ 0.5V
Package Thermal Impedance,
θ
JA
31.4°C/W (0 mps)
Storage Temperature, T
STG
-65°C to 150°C
NOTE: Stresses beyond those listed under Absolute
Maximum Ratings may cause permanent damage to the
device. These ratings are stress specifications only. Functional
operation of product at these conditions or any conditions beyond
those listed in the DC Characteristics or AC Characteristics is not
implied. Exposure to absolute maximum rating conditions for ex-
tended periods may affect product reliability.
TABLE 4A. POWER SUPPLY DC CHARACTERISTICS, V
DD
= V
DD_REFOUT
= V
DDOB
= V
DDOC
= 3.3V±5%, TA = -40°C TO 85°C
TABLE 4B. LVCMOS/LVTTL DC CHARACTERISTICS, V
DD
= V
DD_REFOUT
= V
DDOB
= V
DDOC
= 3.3V±5%, TA = -40°C TO 85°C
Symbol
Parameter
Test Conditions
Minimum
Typical
Maximum
Units
V
DD
Core Supply Voltage
3.135
3.3
3.465
V
V
DDA
Analog Supply Voltage
V
DD
– 0.20
3.3
V
DD
V
V
DDOB,
V
DDOC
Output Supply Voltage
3.135
3.3
3.465
V
I
DD
Power Supply Current
HCSL Loaded, LVCMOS No Load
300
mA
I
DDA
Analog Supply Current
20
mA
Symbol
Parameter
Test Conditions
Minimum
Typical
Maximum
Units
V
IH
Input High Voltage
2
V
DD
+ 0.3
V
V
IL
Input Low Voltage
-0.3
0.8
V
I
IH
Input
High Current
QA_OE, QBC_OE,
nMR, SSC0, SSC1,
V
DD
= V
IN
= 3.465V
10
µA
F_SELA[0:1], F_
SELB[0:2].
F_SELC[0:2],
REF_OE, BYPASS,
REF_IN, REF_SEL
V
DD
= V
IN
= 3.465V
150
µA
I
IL
Input
Low Current
QA_OE, QBC_OE,
nMR, SSC0, SSC1,
V
DD
= 3.465V, V
IN
= 0V
-150
µA
F_SELA[0:1], F_
SELB[0:2].
F_SELC[0:2],
REF_OE, BYPASS,
REF_IN, REF_SEL
V
DD
= 3.465V, V
IN
= 0V
-10
µA
V
OH
Output High Voltage
V
DDOB,
V
DDOC
= I
OH
= -2mA
2.6
V
V
OL
Output Low Voltage
V
DDOB,
V
DDOC
= I
OL
= 2mA
0.5
V
TABLE 5. CRYSTAL CHARACTERISTICS
Parameter
Test Conditions
Minimum
Typical
Maximum
Units
Mode of Oscillation
Fundamental
Frequency
25
MHz
Equivalent Series Resistance (ESR)
50
Ω
Shunt Capacitance
7pF
Drive Level
100
µW
NOTE: Characterized using an 18pF parallel resonant crystal.



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