HCTS299MS

FN3069 Rev 1.00

Page 6 of 12

August 1995

Setup Time S1, S0

to CLK

TSU

VCC = 4.5V

1

+25oC27

-

ns

1

+125oC, -55oC41

-

ns

Hold Time DS0,

DS7, I/On, S0, S1 to

CLK

TH

VCC = 4.5V

1

+25oC0

-

ns

1

+125oC, -55oC0

-

ns

Recovery Time MR

to CLK

TREC

VCC = 4.5V

1

+25oC5

-

ns

1

+125oC, -55oC5

-

ns

Pulse Width MR

TW (MR)

VCC = 4.5V

1

+25oC15

-

ns

1

+125oC, -55oC22

-

ns

Pulse Width CLK

TW (CLK)

VCC = 4.5V

1

+25oC20

-

ns

1

+125oC, -55oC30

-

ns

NOTE:

1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly

tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER

SYMBOL

(NOTES 1, 2)

CONDITIONS

TEMPERATURE

200K RAD

LIMITS

UNITS

MIN

MAX

Quiescent Current

ICC

VCC = 5.5V, VIN = VCC or GND

+25oC-

0.75

mA

Output Current (Sink)

IOL

VCC = 4.5V, VIN = VCC or GND,

VOUT = 0.4V

+25oC6.0

-

mA

Output Current

(Source)

IOH

VCC = 4.5V, VIN = VCC or GND,

VOUT = VCC -0.4V

+25oC-6.0

-

mA

Output Voltage Low

VOL

VCC = 4.5V or 5.5V, VIH = VCC/2,

VIL = 0.8V, IOL = 50

A

+25oC-

0.1

V

Output Voltage High

VOH

VCC = 4.5V or 5.5V, VIH =VCC/2,

VIL = 0.8V, IOH = -50

A

+25oCVCC

-0.1

-V

Input Leakage Current

IIN

VCC = 5.5V, VIN = VCC or GND

+25oC-

5

A

Three-State Output

Leakage Current

IOZ

Applied Voltage = 0V or VCC, VCC = 5.5V

+25oC-

50

A

Noise Immunity

Functional Test

FN

VCC = 4.5V, VIH = 2.25V,

VIL = 0.8V, (Note 3)

+25oC

---

CLK to I/On

TPHL,

TPLH

VCC = 4.5V

+25oC

2

32

ns

CLK to Q0, Q7

TPHL,

TPLH

VCC = 4.5V

+25oC

2

34

ns

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

PARAMETER

SYMBOL

CONDITIONS

NOTES

TEMPERATURE

LIMITS

UNITS

MIN

MAX