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DSPIC30F bảng dữ liệu(PDF) 196 Page - Microchip Technology |
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DSPIC30F bảng dữ liệu(HTML) 196 Page - Microchip Technology |
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196 / 248 page ![]() dsPIC30F DS70083G-page 194 Preliminary 2004 Microchip Technology Inc. TABLE 23-9: ELECTRICAL CHARACTERISTICS: BOR TABLE 23-10: DC CHARACTERISTICS: PROGRAM AND EEPROM DC CHARACTERISTICS Standard Operating Conditions: 2.5V to 5.5V (unless otherwise stated) Operating temperature -40°C ≤ TA ≤ +85°C for Industrial -40 °C ≤ TA ≤ +125°C for Extended Param No. Symbol Characteristic Min Typ(1) Max Units Conditions BO10 V BOR BOR Voltage(2) on V DD transition high to low BORV = 00(3) — — — V Not in operating range BORV = 01 2.7 — 2.86 V BORV = 10 4.2 — 4.46 V BORV = 11 4.5 — 4.78 V BO15 V BHYS —5 — mV Note 1: Data in “Typ” column is at 5V, 25°C unless otherwise stated. Parameters are for design guidance only and are not tested. 2: These parameters are characterized but not tested in manufacturing. 3: 00 values not in usable operating range. DC CHARACTERISTICS Standard Operating Conditions: 2.5V to 5.5V (unless otherwise stated) Operating temperature -40°C ≤ TA ≤ +85°C for Industrial -40 °C ≤ TA ≤ +125°C for Extended Param No. Symbol Characteristic Min Typ(1) Max Units Conditions Data EEPROM Memory(2) D120 E D Byte Endurance 100K 1M — E/W -40 °C ≤ TA ≤ +85°C D121 V DRW V DD for Read/Write V MIN — 5.5 V Using NVMCON to read/write V MIN = Minimum operating voltage D122 T DEW Erase/Write Cycle Time — 2 — ms D123 T RETD Characteristic Retention 40 100 — Year Provided no other specifications are violated D124 I DEW I DD during Programming — 10 30 mA Row erase Program FLASH Memory(2) D130 E P Cell Endurance 10K 100K — E/W -40 °C ≤ TA ≤ +85°C D131 V PR V DD for Read V MIN —5.5 V V MIN = Minimum operating voltage D132 V EB V DD for Bulk Erase 3.0 — 5.5 V D133 V PEW V DD for Erase/Write 3.0 — 5.5 V D134 T PEW Erase/Write Cycle Time — 2 — ms D135 T RETD Characteristic Retention 40 100 — Year Provided no other specifications are violated D136 T EB ICSP Block Erase Time — 4 — ms D137 I PEW I DD during Programming — 10 30 mA Row erase D138 I EB I DD during Programming — 10 30 mA Bulk erase Note 1: Data in “Typ” column is at 5V, 25°C unless otherwise stated. 2: These parameters are characterized but not tested in manufacturing. |
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