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DSPIC30F bảng dữ liệu(PDF) 196 Page - Microchip Technology

tên linh kiện DSPIC30F
Giải thích chi tiết về linh kiện  General Purpose and Sensor Families High-Performance Digital Signal Controllers
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nhà sản xuất  MICROCHIP [Microchip Technology]
Trang chủ  http://www.microchip.com
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DSPIC30F bảng dữ liệu(HTML) 196 Page - Microchip Technology

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dsPIC30F
DS70083G-page 194
Preliminary
 2004 Microchip Technology Inc.
TABLE 23-9:
ELECTRICAL CHARACTERISTICS: BOR
TABLE 23-10: DC CHARACTERISTICS: PROGRAM AND EEPROM
DC CHARACTERISTICS
Standard Operating Conditions: 2.5V to 5.5V
(unless otherwise stated)
Operating temperature
-40°C
≤ TA ≤ +85°C for Industrial
-40
°C ≤ TA ≤ +125°C for Extended
Param
No.
Symbol
Characteristic
Min
Typ(1)
Max
Units
Conditions
BO10
V
BOR
BOR Voltage(2) on
V
DD transition high to
low
BORV = 00(3)
—
—
—
V
Not in operating
range
BORV = 01
2.7
—
2.86
V
BORV = 10
4.2
—
4.46
V
BORV = 11
4.5
—
4.78
V
BO15
V
BHYS
—5
—
mV
Note 1:
Data in “Typ” column is at 5V, 25°C unless otherwise stated. Parameters are for design guidance only and
are not tested.
2:
These parameters are characterized but not tested in manufacturing.
3:
00
values not in usable operating range.
DC CHARACTERISTICS
Standard Operating Conditions: 2.5V to 5.5V
(unless otherwise stated)
Operating temperature
-40°C
≤ TA ≤ +85°C for Industrial
-40
°C ≤ TA ≤ +125°C for Extended
Param
No.
Symbol
Characteristic
Min
Typ(1)
Max
Units
Conditions
Data EEPROM Memory(2)
D120
E
D
Byte Endurance
100K
1M
—
E/W
-40
°C ≤ TA ≤ +85°C
D121
V
DRW
V
DD for Read/Write
V
MIN
—
5.5
V
Using NVMCON to read/write
V
MIN = Minimum operating
voltage
D122
T
DEW
Erase/Write Cycle Time
—
2
—
ms
D123
T
RETD
Characteristic Retention
40
100
—
Year
Provided no other specifications
are violated
D124
I
DEW
I
DD during Programming
—
10
30
mA
Row erase
Program FLASH Memory(2)
D130
E
P
Cell Endurance
10K
100K
—
E/W
-40
°C ≤ TA ≤ +85°C
D131
V
PR
V
DD for Read
V
MIN
—5.5
V
V
MIN = Minimum operating
voltage
D132
V
EB
V
DD for Bulk Erase
3.0
—
5.5
V
D133
V
PEW
V
DD for Erase/Write
3.0
—
5.5
V
D134
T
PEW
Erase/Write Cycle Time
—
2
—
ms
D135
T
RETD
Characteristic Retention
40
100
—
Year
Provided no other specifications
are violated
D136
T
EB
ICSP Block Erase Time
—
4
—
ms
D137
I
PEW
I
DD during Programming
—
10
30
mA
Row erase
D138
I
EB
I
DD during Programming
—
10
30
mA
Bulk erase
Note 1:
Data in “Typ” column is at 5V, 25°C unless otherwise stated.
2:
These parameters are characterized but not tested in manufacturing.



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