CEP50N06/CEB50N06

Electrical Characteristics Tc = 25 C unless otherwise noted

Parameter

Symbol

Min

Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Forward Transconductance

Gate Threshold Voltage

Static Drain-Source

On-Resistance

BVDSS

IDSS

IGSSR

IGSSF

22

2

4

-100

100

1

mΩ

V

nA

nA

µ

A

V

S

2

Gate Body Leakage Current, Reverse

On Characteristics b

Dynamic Characteristics c

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Switching Characteristics c

Turn-On Delay Time

Turn-Off Fall Time

Turn-Off Delay Time

Turn-On Rise Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage b

Test Condition

VGS = 0V, ID = 250µA

VGS(th)

RDS(on)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

IS

VSD

Typ

Max

60

VDS = 54V, VGS = 0V

VGS = 20V, VDS = 0V

VGS = -20V, VDS = 0V

VGS = VDS, ID = 250µA

VGS = 10V, ID = 30A

VDS = 10V, ID = 25A

VDD = 30V, ID = 48A,

VGS = 10V, RGEN = 7.5Ω

VDS = 48V, ID = 48A,

VGS = 10V

VDS = 25V, VGS = 0V,

f = 1.0 MHz

VGS = 0V, IS = 30A

1230

345

16

18

12.5

32.5

3

24

14

65

6

26

6

9

34

50

1.2

19

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

A

V

19

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.

b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d.L = 90µH, IAS = 50A, VDD = 24V, RG = 25Ω, Starting TJ = 25 C