BA317 datasheet(3/7 Pages) PHILIPS

3 / 7 page

1996 Sep 03

Philips Semiconductors

Product speciﬁcation

High-speed diodes

BA316; BA317; BA318

ELECTRICAL CHARACTERISTICS

Tj =25 °C; unless otherwise speciﬁed.

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed circuit-board without metallization pad.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

forward voltage

see Fig.3

IF =1mA

−

700

IF =10mA

−

850

IF = 100 mA

−

1100

reverse current

see Fig.5

BA316

VR =10V

−

200

VR =10V; Tj = 150 °C

−

100

µA

BA317

VR =10V

−

VR =30V

−

200

VR =30V; Tj = 150 °C

−

100

µA

BA318

VR =30V

−

VR =50V

−

200

VR =50V; Tj = 150 °C

−

100

µA

diode capacitance

f = 1 MHz; VR = 0; see Fig.6

−

2pF

trr

reverse recovery time

when switched from IF = 10 mA to

IR = 60 mA; RL = 100 Ω;

measured at IR = 1 mA; see Fig.7

−

4ns

Vfr

forward recovery voltage

when switched from IF = 50 mA;

tr = 20 ns; see Fig.8

−

2.5

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

lead length 10 mm

240

K/W

Rth j-a

thermal resistance from junction to ambient

lead length 10 mm; note 1

500

K/W

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