Nexperia

PDTC143/114/124/144EQB series

50 V, 100 mA NPN resistor-equipped transistors

IC (mA)

10-1

10

1

006aac834

1

10

VI(off)

(V)

10-1

(1)

(2)

(3)

VCE = 5 V

(1) Tamb = -40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig. 8. PDTC143EQB: Off-state input voltage as a

function of collector current; typical values

VCB (V)

0

50

40

20

30

10

006aac835

1

2

3

Cc

(pF)

0

f = 1 MHz

Tamb = 25 °C

Fig. 9. PDTC143EQB: Collector capacitance as a

function of collector-base voltage; typical

values

IC (mA)

10-1

102

10

1

006aac768

102

10

103

hFE

1

(1)

(2)

(3)

VCE = 5 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

Fig. 10. PDTC114EQB: DC current gain as a function of

collector current; typical values

VCE (V)

0

5

4

2

3

1

aaa-018663

0.04

0.06

0.02

0.08

0.1

IC

(A)

0

IB = 0.06 mA

0.12 mA

0.18 mA

0.24 mA

0.30 mA

0.36 mA

0.60 mA

0.48 mA

0.42 mA

0.54 mA

Tamb = 25 °C

Fig. 11. PDTC114EQB: Collector current as a function of

collector-emitter voltage; typical values

PDTC143_114_124_144EQB_SER

All information provided in this document is subject to legal disclaimers.

©

Nexperia B.V. 2021. All rights reserved

Product data sheet

Rev. 1 — 1 October 2021

7 / 18