over the whole operating temperature range.

In this respect, it is necessary that IIN+ << IR2ext, where IIN+ is the current flowing through IN+ terminal and IR2ext

is the current across R2.

A too low IR2ext value makes VREF (and the output voltage VOUT) sensitive to the β degradation of the bipolars at

the input stage. This could lead to noticeable drifts under process and TID.

Conversely, a too high IR2ext value increases the minimum VIN threshold needed for the regulation (since this

current is provided by the bandgap buffer) and the VOUT temperature drift.

Having an R1 high value ( > 10 kΩ ) is beneficial for the SEE immunity of the device as it enhances, in

combination with CFILT_C, the mitigating effect of the low-pass filter versus the SEE arising on VBG and joining

the node IN+.

Regarding IR2ext, the suggested value of this current in application ranges in the interval [10 μA ÷ 20 μA].

RHFL6000L

Typical application diagram

DS14125 - Rev 1

page 9/28