PBLS6022D datasheet(8/17 Pages) NEXPERIA

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PBLS6022D_1

Product data sheet

Rev. 01 — 13 August 2009

7 of 16

NXP Semiconductors

PBLS6022D

60 V, 1.5 A PNP BISS loadswitch

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

VBEon

base-emitter

turn-on voltage

VCE = −10 V; IC = −1A

[1] -

−0.75 −1.1

delay time

VCC = −10 V; IC = −1A;

IBon = −50 mA;

IBoff =50mA

-17

rise time

ton

turn-on time

storage time

350

fall time

toff

turn-off time

415

transition frequency

IC = −50 mA; VCE = −10 V;

f = 100 MHz

150

MHz

collector capacitance

VCB = −10 V; IE =ie =0A;

f=1MHz

-30

TR2; NPN resistor-equipped transistor

ICBO

collector-base cut-off

current

VCB =50V; IE = 0 A

100

ICEO

collector-emitter

cut-off current

VCE =30V; IB = 0 A

--1

µA

VCE =30V; IB =0A;

Tj = 150 °C

--50

µA

IEBO

emitter-base cut-off

current

VEB =5V; IC = 0 A

900

µA

hFE

DC current gain

VCE =5V; IC =10mA

VCEsat

collector-emitter

saturation voltage

IC = 10 mA; IB = 0.5 mA

150

VI(off)

off-state input voltage

VCE =5V; IC = 100 µA

1.1

0.5

VI(on)

on-state input voltage

VCE = 0.3 V; IC = 20 mA

2.5

1.9

bias resistor 1 (input)

3.3

4.7

6.1

Ω

R2/R1

bias resistor ratio

0.8

1.2

collector capacitance

VCB =10V; IE =ie =0A;

f=1MHz

2.5

Table 7.

Characteristics …continued

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

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