PBLS6002D_2

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 02 — 7 September 2009

4 of 16

NXP Semiconductors

PBLS6002D

60 V PNP BISS loadswitch

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.

[3]

Device mounted on a ceramic PCB, Al2O3, standard footprint.

(1) Ceramic PCB, Al2O3, standard footprint

(2) FR4 PCB, mounting pad for collector 1cm2

(3) FR4 PCB, standard footprint

Fig 1.

Power derating curves

Tamb (°C)

0

160

120

40

80

006aaa461

0.4

0.2

0.6

0.8

Ptot

(W)

0

(1)

(2)

(3)

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per device

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1] -

-

312

K/W

[2] -

-

236

K/W

[3] -

-

208

K/W

TR1; PNP low VCEsat transistor

Rth(j-sp)

thermal resistance from

junction to solder point

-

-

105

K/W