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ISO808A bảng dữ liệu(PDF) 12 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  Galvanic isolated octal high-side power solid state relay with SPI interface for high inductive loads
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Table 9. Serial interface timings (VDD = 5 V; VCC = 24 V; -40 °C < TJ < 125 °C)
Symbol
Parameter
Test conditions
Min. Typ. Max.
Unit
fCLK
SPI clock frequency
20
MHz
TCLK
SPI clock period
50
ns
tr(CLK) tf(CLK)
SPI clock rise/fall time (see Figure 7, Figure 8)
5
ns
tsu(SS)
SS setup time (see Figure 7, Figure 8)
80
ns
th(SS)
SS hold time (see Figure 7, Figure 8)
80
ns
tc(SS)
SS disable time (see Figure 7, Figure 8)
20
μs
tw(CLK)
CLK high time (see Figure 7, Figure 8)
15
ns
tsu(SDI)
Data input setup time (see Figure 7, Figure 8)
6
ns
th(SDI)
Data input hold time (see Figure 7, Figure 8)
6
ns
ta(SDO)
Data output access time (see Figure 7, Figure 8)
RPULL-DOWN = 300 Ω
CLOAD = 50 pF
25
ns
tdis(SDO)
Data output disable time (see Figure 7, Figure 8)
20
ns
tv(SDO)
Data output valid time (see Figure 7, Figure 8)
20
ns
tJITTER
Jitter on single channel tCYCLE ( SS) = 20 μs
6
μs
Jitter on single channel tCYCLE ( SS) < 20 μs
20
Table 10. Internal communication timings (VDD = 5 V; VCC = 24 V; -40 °C < TJ < 125 °C)
Symbol
Parameter
Test condition
Min.
Typ.
Max.
Unit
frefresh
Refresh delay
15
kHz
tWD
Watchdog time
272
320
400
μs
Table 11. Insulation and safety-related specifications
Symbol
Parameter
Test conditions
Value Unit
CLR(1)
Clearance (minimum external air gap)
Measured from input terminals to output terminals,
shortest distance through air
2.6
mm
CPG(1) Creepage (minimum external tracking)
Measured from input terminals to output terminals,
shortest distance path along body
2.6
mm
CTI(2)
Comparative tracking index (tracking
resistance)
≥400
V
Isolation group
Material group
II
-
1. Creepage and clearance requirements should be applied according to the specific equipment isolation standard of an
application. Care should be taken to maintain the creepage and clearance distance of a board design to ensure that the
mounting pads of the isolator on the PCB do not reduce this distance.
2. When high voltage is applied across the isolator, electric discharges on or close to the surface of the package, can cause
localized deterioration in the mold compound, resulting in a partially conducting path from one side of the isolator to the
other. This phenomenon is called tracking. The ability of a material to withstand tracking is quantified by a comparative
tracking index (CTI). Using a mold compound with a higher CTI allows the use of smaller packages and saves board space.
ISO808A, ISO808A-1
Electrical characteristics
DS14170 - Rev 1
page 12/38



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