Nexperia

BCW68 series

45 V, 800 mA PNP general-purpose transistor

BCW68X_SER

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Product data sheet

Rev. 1 — 21 April 2017

3 / 13

Symbol

Parameter

Conditions

Min

Max

Unit

IBM

peak base current

single pulse; tp ≤ 1 ms

-

-200

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1]

-

250

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

[1]

Device mounted on an FR4 Printed-Circuit-Board (PCB), single-sided chopper, tin-plated and standard footprint.

Tamb (°C)

-75

175

125

25

75

-25

aaa-026537

200

100

300

400

Ptot

(mW)

0

FR4 PCB, standard footprint

Figure 1. Power derating curve

9 Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from junction

to ambient

in free air

[1]

-

-

500

K/W

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.