SGT65R65AL datasheet(1/17 Pages) STMICROELECTRONICS

tên linh kiện	SGT65R65AL

Giải thích chi tiết về linh kiện	650 V, 49 mΩ typ., 25 A, e-mode PowerGaN transistor

PDF	17 Pages

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nhà sản xuất	STMICROELECTRONICS [STMicroelectronics]

Trang chủ	http://www.st.com

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PowerFLAT 5x6 HV

for PowerGaN

1

2

3

4

G4D5678S12KS3

D(5,6,7,8)

G(4)

KS(3) S(1,2)

Features

Order code

VDS

RDS(on) max.

ID

Series

SGT65R65AL

650 V

65 mΩ

25 A

G-HEMT

•

Enhancement mode normally off transistor

•

Very high switching speed

•

High power management capability

•

Extremely low capacitances

•

Kelvin source pad for optimum gate driving

•

Zero reverse recovery charge

Applications

•

AC-DC converters

•

AC-DC PSU for server and telecom

•

LED illumination

•

Uninterruptable power supplies (UPS)

Description

The SGT65R65AL is a 650 V, 25 A e-mode PowerGaN transistor combined with

a well established packaging technology. The resulting G-HEMT device provides

extremely low conduction losses, high current capability and ultra fast switching

operation to enable high power density and unbeatable efficiency performances.

Product status link

SGT65R65AL

Product summary

Order code

SGT65R65AL

Marking

65R65A

Package

PowerFLAT 5x6 HV

for PowerGaN

Packing

Tape and reel

650 V, 49 mΩ typ., 25 A, e-mode PowerGaN transistor

SGT65R65AL

Datasheet

DS13251 - Rev 7 - March 2023

For further information contact your local STMicroelectronics sales office.

www.st.com

Số phần tương tự - SGT65R65AL

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Silan Microelectronics ...	SGT60N60FD1P7	307Kb / 10P	60A, 600V FIELD STOP IGBT Rev.:1.7
	SGT60N60FD1PN	307Kb / 10P	60A, 600V FIELD STOP IGBT Rev.:1.7
	SGT60N60FD1PS	307Kb / 10P	60A, 600V FIELD STOP IGBT Rev.:1.7
	SGT60N60FD1PT	307Kb / 10P	60A, 600V FIELD STOP IGBT Rev.:1.7
	SGT60N60FDB1P7	307Kb / 10P	60A, 600V FIELD STOP IGBT Rev.:1.7

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Mô tả tương tự - SGT65R65AL

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	SGT120R65AL	649Kb / 17P	650 V, 75 mΩ typ., 15 A, e-mode PowerGaN transistor 23-Mar-2023
GaN Systems Inc.	GS-065-004-1-L	1Mb / 16P	650 V E-mode GaN transistor Rev 220712
	GS-065-008-1-L	1Mb / 16P	650 V E-mode GaN transistor Rev 220712
	GS-065-011-1-L	1Mb / 16P	650 V E-mode GaN transistor Rev 220708
	GS-065-011-2-L	1Mb / 16P	650 V E-mode GaN transistor Rev 220712
	GS-065-018-2-L	906Kb / 16P	650 V E-mode GaN transistor Rev 220921
	GS-065-030-2-L	1Mb / 16P	650 V E-mode GaN transistor Rev 220712
	GS-065-060-5-B-A	1Mb / 16P	Automotive 650 V GaN E-mode transistor Rev 211025
	GS-065-060-5-T-A	1Mb / 17P	Automotive 650 V GaN E-mode transistor Rev 220127

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