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STM8AF6366TCX bảng dữ liệu(PDF) 63 Page - STMicroelectronics

tên linh kiện STM8AF6366TCX
Giải thích chi tiết về linh kiện  Automotive 8-bit MCU, with up to 128-Kbyte Flash memory, data EEPROM, 10-bit ADC, timers, LIN, USART, SPI, I2C, 3 to 5.5 V
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STM8AF6366TCX bảng dữ liệu(HTML) 63 Page - STMicroelectronics

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STM8AF6388
Electrical characteristics
114
10.3.1
VCAP external capacitor
Stabilization for the main regulator is achieved connecting an external capacitor CEXT to the
VCAP pin. CEXT is specified in Table 22. Care should be taken to limit the series inductance
to less than 15 nH.
Figure 12. External capacitor CEXT
1. Legend: ESR is the equivalent series resistance and ESL is the equivalent inductance.
10.3.2
Supply current characteristics
The current consumption is measured as described in Figure 9 on page 59 and Figure 10
on page 60.
If not explicitly stated, general conditions of temperature and voltage apply.
Table 23. Operating conditions at power-up/power-down
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
tVDD
VDD rise time rate
-
2(1)
1. Guaranteed by design, not tested in production.
-
µs/V
VDD fall time rate
-
2(1)
-
tTEMP
Reset release delay
VDD rising
-
1
1.7
ms
Reset generation delay
VDD falling
-
3
-
µs
VIT+
Power-on reset
threshold(2) (3)
2. If VDD is below 3 V, the code execution is guaranteed above the VIT- and VIT+ thresholds. RAM content is
kept. The EEPROM programming sequence must not be initiated.
3. There is inrush current into VDD present after device power on to charge CEXT capacitor. This inrush
energy depends from CEXT capacitor value. For example, a CEXT of 1 μF requires Q=1 μF x 1.8 V =
1.8 μC.
-
2.65
2.8
2.95
V
VIT-
Brown-out reset
threshold
-
2.58
2.73
2.88
VHYS(BOR)
Brown-out reset
hysteresis
--
70(1)
-mV
MSv36488V1
ESR
RLeak
ESL
C



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