Nexperia

BAT32LS-Q

General-purpose Schottky diode

6. Ordering information

Table 3. Ordering information

Package

Type number

Name

Description

Version

BAT32LS-Q

DFN1006BD-2 Leadless ultra small plastic package with side-wettable

flanks (SWF); 2 terminals; 0.65 mm pitch; 1 mm x 0.6 mm

x 0.47 mm body

SOD882BD

7. Marking

Table 4. Marking codes

Type number

Marking code

BAT32LS-Q

8X

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VR

reverse voltage

-

30

V

IF

forward current

-

200

mA

IFRM

repetitive peak forward

current

tp ≤ 1 ms; δ ≤ 0.25

-

1

A

IFSM

non-repetitive peak

forward current

tp = 8 ms; square wave; Tj(init) = 25 °C

-

3

A

[1]

-

335

mW

Ptot

total power dissipation

Tamb ≤ 25 °C

[2]

-

610

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), 70 μm single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, 70 μm single-sided copper, tin-plated mounting pad for cathode 1 cm2.

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

[1] [2] -

-

375

K/W

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[3]

-

-

205

K/W

[1] Device mounted on an FR4 PCB, 70 µm single-sided copper, tin-plated and standard footprint.

[2] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a

significant part of the total power losses.

[3] Device mounted on an FR4 PCB, 70 μm single-sided copper, tin-plated mounting pad for cathode 1 cm2.

BAT32LS-Q

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Product data sheet

21 April 2022

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