ICM7170

FN3019 Rev.6.00

Page 3 of 14

Nov 2003

Absolute Maximum Ratings TA = 25oC

Thermal Information

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +8.0V

Power Dissipation (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . .500mW

Storage Temperature Range . . . . . . . . . . . . . . . . . . -65oC to 150oC

Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . .300oC

Input Voltage (Any Terminal) (Note 2) . . . . VDD +0.3V to VSS -0.3V

Thermal Resistance (Typical, Note 1)

JA (oC/W) JC (oC/W)

PDIP Package . . . . . . . . . . . . . . . . . . .

50

N/A

SOIC Package . . . . . . . . . . . . . . . . . . .

75

N/A

Maximum Junction Temperature

Plastic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .150oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1.

JA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details.

2. Due to the SCR structure inherent in the CMOS process, connecting any terminal at voltages greater than VDD or less than VSS may cause destructive

device latchup. For this reason, it is recommended that no inputs from external sources not operating on the same power supply be applied to the

device before its supply is established, and that in multiple supply systems, the supply to the ICM7170 be turned on first.

Electrical Specifications

TA = -40oC to 85oC, VDD +5V 10%, VBACKUP VDD, VSS = 0V Unless Otherwise Specified

All IDD specifications include all input and output leakages (ICM7170 and ICM7170A)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNITS

VDD Supply Range, VDD

fOSC = 32kHz

1.9

-

5.5

V

fOSC = 1, 2, 4MHz

2.6

-

5.5

V

Standby Current, ISTBY(1)

fOSC = 32kHz

Pins 1 - 8,15 - 22 and 24 = VDD

ICM7170

-

1.2

20.0

A

VDD = VSS; VBACKUP = VDD - 3.0V

For ICM7170A See General Notes 5

ICM7170A

-

1.2

5.0

A

Standby Current, ISTBY(2)

fOSC = 4MHz Pins 1 - 8,15 - 22 and 24 = VDD

VDD = VSS; VBACKUP = VDD - 3.0V

-20

150

A

Operating Supply Current, IDD(1)

fOSC = 32kHz, Read/Write Operation at 100Hz

-

0.3

1.2

mA

Operating Supply Current, IDD(2)

fOSC = 32kHz, Read/Write Operation at 1MHz

-

1.0

2.0

mA

Input Low Voltage (Except Osc.), VIL

VDD = 5.0V

-

-

0.8

V

Input High Voltage (Except Osc.), VIH

VDD = 5.0V

2.4

-

-

V

Output Low Voltage (Except Osc.), VOL

IOL = 1.6mA

-

-

0.4

V

Output High Voltage Except

INTERRUPT (Except Osc.), VOH

IOH = -400A2.4

-

-

V

Input Leakage Current, IIL

VIN = VDD or VSS

-10

0.5

+10

A

Three-State Leakage Current

(D0 - D7), IOL(1)

VO = VDD or VSS

-10

0.5

+10

A

Backup Battery Voltage, VBATTERY

fOSC = 1, 2, 4MHz

2.6

-

VDD - 1.3

V

Backup Battery Voltage, VBATTERY

fOSC = 32kHz

1.9

-

VDD - 1.3

V

Leakage Current INTERRUPT, IOL(2)

VO = VDD

INT SOURCE

Connected to VSS

-0.5

10

A

Capacitance D0 - D7, CI/O

-8

-

pF

Capacitance A0 - A4, CADDRESS

-6

-

pF