1

2

TAB

3

H2PAK-2

DTG1S23NZ

D(TAB)

G(1)

S(2, 3)

Features

Order code

VDS

RDS(on) max.

ID

STH10N80K5-2AG

800 V

0.68 Ω

8 A

•

AEC-Q101 qualified

•

Industry’s lowest RDS(on) x area

•

Industry’s best FoM (figure of merit)

•

Ultra-low gate charge

•

100% avalanche tested

Applications

•

Switching applications

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh K5

technology based on an innovative proprietary vertical structure. The result is a

dramatic reduction in on-resistance and ultra-low gate charge for applications

requiring superior power density and high efficiency.

Product status link

STH10N80K5-2AG

Product summary

Order code

STH10N80K5-2AG

Marking

10N80K5

Package

H²PAK-2

Packing

Tape and reel

Automotive-grade N-channel 800 V, 0.60 Ω typ., 8 A MDmesh K5

Power MOSFET in an H²PAK-2 package

STH10N80K5-2AG

Datasheet

DS13355 - Rev 1 - May 2020

For further information contact your local STMicroelectronics sales office.

www.st.com