MMBT3906 datasheet(4/9 Pages) NEXPERIA

4 / 9 page

2003 Mar 18

NXP Semiconductors

Product data sheet

PNP switching transistor

MMBT3906

THERMAL CHARACTERISTICS

Note

Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −30 V

−

−50

IEBO

emitter cut-off current

IC = 0; VEB = −6 V

−

−50

hFE

DC current gain

VCE = −1 V; see Fig.2

IC = −0.1 mA

−

IC = −1 mA

−

IC = −10 mA

100

300

IC = −50 mA

−

IC = −100 mA

−

VCEsat

collector-emitter saturation

voltage

IC = −10 mA; IB = −1 mA

−

−250

IC = −50 mA; IB = −5 mA

−

−400

VBEsat

base-emitter saturation voltage

IC = −10 mA; IB = −1 mA

−

−850

IC = −50 mA; IB = −5 mA

−

−950

collector capacitance

IE = ie = 0; VCB = −5 V; f = 1 MHz

−

4.5

emitter capacitance

IC = ic = 0; VEB = −500 mV;

f = 1 MHz

−

transition frequency

IC = −10 mA; VCE = −20 V;

f = 100 MHz

250

−

MHz

noise figure

IC = −100 µA; VCE = −5 V;

RS = 1 kΩ; f = 10 Hz to 15.7 kHz

−

Switching times (between 10% and 90% levels); see Fig.7

delay time

ICon = −10 mA; IBon = −1 mA;

IBoff = 1 mA

−

rise time

−

storage time

−

225

fall time

−

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