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BFS20W bảng dữ liệu(PDF) 3 Page - Nexperia B.V. All rights reserved

tên linh kiện BFS20W
Giải thích chi tiết về linh kiện  NPN medium frequency transistor
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BFS20W bảng dữ liệu(HTML) 3 Page - Nexperia B.V. All rights reserved

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1999 Apr 21
2
NXP Semiconductors
Product data sheet
NPN medium frequency transistor
BFS20W
FEATURES
• Low current (max. 25 mA)
• Low voltage (max. 20 V).
• Very low feedback capacitance (typ. 350 fF).
APPLICATIONS
• IF and VHF applications in thick and thin-film circuits.
DESCRIPTION
NPN medium frequency transistor in a SOT323 (SC-70)
plastic package.
MARKING
Note
1.
∗ = -: Made in Hong Kong.
∗ = t: Made in Malaysia.
PINNING
TYPE NUMBER
MARKING CODE(1)
BFS20W
N1
∗
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1
Simplified outline (SOT323; SC-70) and
symbol.
handbook, halfpage
2
3
1
MAM062
3
2
1
Top view
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Refer to SOT323 (SC-70) standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
30
V
VCEO
collector-emitter voltage
open base
−
20
V
VEBO
emitter-base voltage
open collector
−
4
V
IC
collector current (DC)
−
25
mA
ICM
peak collector current
−
25
mA
IBM
peak base current
−
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C



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