1.

Product profile

1.1 General description

NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.

[1]

Valid for all available selection groups.

1.2 Features and benefits

 High current

 Three current gain selections

 High power dissipation capability

 Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)

 Leadless very small SMD plastic package with medium power capability (SOT1061)

 AEC-Q101 qualified

1.3 Applications

1.4 Quick reference data

[1]

Pulse test: tp  300 s;  = 0.02.

BCP55; BCX55; BC55PA

60 V, 1 A NPN medium power transistors

Rev. 8 — 24 October 2011

Product data sheet

Table 1.

Product overview

Type number[1]

Package

PNP complement

Nexperia

JEITA

JEDEC

BCP55

SOT223

SC-73

-

BCP52

BCX55

SOT89

SC-62

TO-243

BCX52

BC55PA

SOT1061

-

-

BC52PA

 Linear voltage regulators

 Power management

 Low-side switches

 MOSFET drivers

 Battery-driven devices

 Amplifiers

Table 2.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCEO

collector-emitter voltage

open base

-

-

60

V

IC

collector current

-

-

1

A

ICM

peak collector current

single pulse; tp  1 ms

--2

A

hFE

DC current gain

VCE =2V; IC =150 mA [1] 63

-

250

hFE selection -10

VCE =2V; IC =150 mA [1] 63

-

160

hFE selection -16

VCE =2V; IC =150 mA [1] 100

-

250