BCM856BS_BCM856DS_1

Product data sheet

Rev. 01 — 7 August 2008

4 of 14

Nexperia

BCM856BS; BCM856DS

PNP/PNP matched double transistors

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

7.

Characteristics

Table 7.

Thermal characteristics

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

Rth(j-a)

thermal resistance from junction to

ambient

in free air

BCM856BS (SOT363)

BCM856BS/DG (SOT363)

[1] -

-

625

K/W

BCM856DS (SOT457)

BCM856DS/DG (SOT457)

[1] -

-

500

K/W

Per device

Rth(j-a)

thermal resistance from junction to

ambient

in free air

BCM856BS (SOT363)

BCM856BS/DG (SOT363)

[1] -

-

416

K/W

BCM856DS (SOT457)

BCM856DS/DG (SOT457)

[1] -

-

328

K/W

Table 8.

Characteristics

Tamb =25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

ICBO

collector-base cut-off

current

VCB = −30 V;

IE =0A

--

−15

nA

VCB = −30 V;

IE =0A;

Tj = 150 °C

--

−5

µA

IEBO

emitter-base cut-off

current

VEB = −5V;

IC =0A

--

−100

nA

hFE

DC current gain

VCE = −5V;

IC = −10 µA

-

250

-

VCE = −5V;

IC = −2mA

200

290

450

VCEsat

collector-emitter

saturation voltage

IC = −10 mA;

IB = −0.5 mA

-

−50

−200

mV

IC = −100 mA;

IB = −5mA

-

−200

−400

mV

VBEsat

base-emitter saturation

voltage

IC = −10 mA;

IB = −0.5 mA

[1] -

−760

-

mV

IC = −100 mA;

IB = −5mA

[1] -

−920

-

mV

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